to-220 -3l plastic-encapsulate mosfets IRF640 mosfet( n-channel ) feature z dynamic dv/dt rating z repetitive avalanche rated z fast switching z ease of paralleling z simple drive requirement d escription third generation hexfets from internation rectifier provide the designer with the best combination of fast switching ,ruggedized device design,low on-resistance and cost effectiveness. the to-220 -3l package is universally pr eferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. the low thermal resistance and low package cost of the to-220 -3l contribute to its wide acceptance throughout the industry. maximum ratings(t a =25 unless otherwise noted ) symbol parameter value units i d continuous drain current, v gs @ 10 v 18 a p d power dissipation 2 w linear derating factor 1.0 w/ v gs gate-souse voltage 20 v e as single pulse avalanche energy (note 1) 580 mj r ja thermal resistance from junction to ambient 62.5 /w t j junction temperature 150 t stg storage temperature -55~+150 to-220 -3l 1. gate 2. drain 3. source 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification d,nov,2013
electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit drain-source breakdown voltage v (br)dss v gs =0v,i d =250a 200 gate-threshold voltage v (gs)th v ds =v gs , i d =250a 2 4 v gate-body leakage l gss v ds =0v, v gs =20v 100 na zero gate voltage drain current i dss v ds =200v, v gs =0v 25 a drain-source on-resistance (note 2) r ds( r n) v gs =10v, i d =11a 0.18 ? forward transconductance (note 2) g fs v ds =50v, i d =11a 6.7 s diode forward voltage (note 2) v sd i s =18a, v gs =0v 2 v input capacitance (note 3) c iss 1300 output capacitance (note 3) c oss 430 reverse transfer capacitance (note 3) c rss v ds =25v, v gs =0v,f=1mhz 130 pf turn-on time(note 2,3) t d( r n) 14 rise time t r 51 turn-off time (note 2,3) t d(off) 45 fall time (note 2,3) t f v dd =100v,r d =5.4 ? , i d =18a, r g =9.1 ? 36 ns notes: 1. v dd =50v,starting t j =25 l=2.7mh,r g =25 ? i as =18a. 2. pulse test: pulse width 300s, duty cycle 2%. 3. these parameters have no way to verify. 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification d,nov,2013
01234567 0.0 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 0 1 2 3 4 5 0.0 0.4 0.8 1.2 1.6 2.0 0.01 0.1 1 10 46810 0.0 0.1 0.2 0.3 0.4 0.5 3 6 9 12 15 18 0.0 0.1 0.2 0.3 0.4 0.5 0102030 0 6 12 18 v ds =30v pulsed drain current i d (a) gate to source voltage v gs (v) transfer characteristics t a =100 t a =25 i d =250ua threshold voltage threshold voltage v th (v) junction temperature t j ( ) 20 0.2 pulsed source current i s (a) source to drain voltage v sd (v) v sd i s ?? t a =100 t a =25 pulsed i d =11a r ds(on) ?? v gs on-resistance r ds(on) ( ) gate to source voltage v gs (v) t a =100 t a =25 t a =25 pulsed on-resistance r ds(on) ( ) drain current i d (a) i d ?? r ds(on) v gs =10v v gs =6v v gs =5.5v pulsed IRF640 output characteristics drain current i d (a) drain to source voltage v ds (v) v gs = 8v 10v v gs =5v v gs =4.5v 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification d,nov,2013
|
